Figure 3 illustrates a cross sectional view of an example processing system. Tesla patent.
Large packages of integrated circuits require manufacturers to improve their production technologies. Tesla filed the patent, “Cooled system-on-wafer with means for reducing the effects of electrostatic discharge and/or electromagnetic interference” to meet the requirements.
In the patent, “Cooled system-on-wafer with means for reducing the effects of electrostatic discharge and/or electromagnetic interference,” filed March 1, 2022, and published September 15, 2022, Tesla describes a new invention that relates to processing systems and more specifically to integrated circuit (IC) packages that can reduce the effects of electrostatic discharge and/or electromagnetic interference.
The manufacturer explains that the recent rise in market demand for artificial intelligence and high-powered computing have pushed integrated circuit (IC) design towards the use of larger IC package sizes. During the assembly of large IC packages, the IC packages may experience electrostatic discharge (ESD) events. Large IC packages may also experience electromagnetic interference (EMI) during use. EMI may generally degrade performance of ICs.
Tesla solves these problems by developing an integrated circuit package. A thermal system in it may include the cooling system and the thermal dissipation structure. The thermal system may include an electrically conductive structure configured at a ground potential such that the thermal system may serve as electrical ground.
Another aspect of this patent is a method of manufacturing a system on a wafer (SoW) assembly. The method includes providing an SoW with contacts on a surface of the system on a wafer SoW, wherein the SoW comprises a plurality of IC dies and one or more routing layers providing electrical connections for the IC dies, and wherein the contacts are electrically connected to the IC dies via the one or more routing layers; and electrically connecting a conductive structure of a thermal system to the contacts on the surface of the SoW by way of at least a plurality of conductive features, wherein the conductive structure of the thermal system is at a ground potential.
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